The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2018
Filed:
Dec. 19, 2014
Elwha Llc, Bellevue, WA (US);
Douglas C. Burger, Bellevue, WA (US);
William Gates, Medina, WA (US);
Andrew F. Glew, Portland, OR (US);
Roderick A. Hyde, Redmond, WA (US);
Muriel Y. Ishikawa, Livermore, CA (US);
Jordin T. Kare, Seattle, WA (US);
John L. Manferdelli, San Francisco, CA (US);
Thomas M. McWilliams, Oakland, CA (US);
Craig J. Mundie, Seattle, WA (US);
Nathan P. Myhrvold, Medina, WA (US);
Burton J. Smith, Seattle, WA (US);
Clarence T. Tegreene, Mercer Island, WA (US);
Thomas A. Weaver, San Mateo, CA (US);
Richard T. Witek, Redmond, WA (US);
Lowell L. Wood, Jr., Bellevue, WA (US);
Victoria Y. H. Wood, Livermore, CA (US);
Elwha LLC, Bellevue, WA (US);
Abstract
A non-contacting inductive interconnect of a three-dimensional integrated circuit includes a first silicon substrate having a first inductive loop. A first layer of high permeability material is deposited on the first silicon substrate that has the first inductive loop forming a first high permeability structure. The circuit further includes a second silicon substrate having a second inductive loop. A magnetic coupling is formed between the first inductive loop and the second inductive loop. The first high permeability structure can enhance the magnetic coupling between the first inductive loop and the second inductive loop. In some embodiments, a second layer of the high permeability material is deposited on the second silicon substrate that has the second inductive loop forming a second high permeability structure. The first high permeability structure and the second high permeability structure can form a magnetic circuit coupling the first inductive loop and the second inductive loop.