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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9997472 B1

PDFFull Text
Date of Patent:
Jun. 12, 2018

Filed:

Jan. 09, 2017

Support for long channel length nanowire transistors

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Karthik Balakrishnan, White Plains, NY (US);

Isaac Lauer, Yorktown Heights, NY (US);

Tenko Yamashita, Schenectady, NY (US);

Jeffrey W. Sleight, Ridgefield, CT (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Tutunjian & Bitetto, P.C.

Vazken Alexanian

Primary Examiner:

Galina Yushina

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 23/00 (2006.01); H01L 29/775 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); B82Y 10/00 (2011.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); B82Y 10/00 (2013.01); H01L 21/02603 (2013.01); H01L 29/0649 (2013.01); H01L 29/0657 (2013.01); H01L 29/0669 (2013.01); H01L 29/0673 (2013.01); H01L 29/4238 (2013.01); H01L 29/42356 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66477 (2013.01); H01L 29/66742 (2013.01); H01L 29/775 (2013.01); H01L 29/78696 (2013.01);
Abstract

A nanowire device includes a first component formed on a substrate and a second component disposed apart from the first component on the substrate. A nanowire is configured to connect the first component to the second component. An anchor pad is formed along a span of the nanowire and configured to support the nanowire along the span to prevent sagging.

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Balakrishnan, Karthik. (2018). Support for long channel length nanowire transistors (U.S. Patent No. 9997472). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9997472

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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