The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2018
Filed:
Apr. 28, 2017
Jooyeon Ha, Hwaseong-si, KR;
Jeonggil Lee, Hwaseong-si, KR;
Dohyung Kim, Seongnam-si, KR;
Keun Lee, Cheongju-si, KR;
Hyunseok Lim, Suwon-si, KR;
Hauk Han, Hwaseong-si, KR;
Jooyeon Ha, Hwaseong-si, KR;
Jeonggil Lee, Hwaseong-si, KR;
Dohyung Kim, Seongnam-si, KR;
Keun Lee, Cheongju-si, KR;
HyunSeok Lim, Suwon-si, KR;
Hauk Han, Hwaseong-si, KR;
Abstract
A memory device includes a vertical string of nonvolatile memory cells on a substrate, along with a ground selection transistor extending between the vertical string of nonvolatile memory cells and the substrate. The ground selection transistor can have a current carrying terminal electrically coupled to a channel region of a nonvolatile memory cell in the vertical string of nonvolatile memory cells. The ground selection transistor includes a gate electrode associated with a ground selection line of the memory device. This gate electrode includes: (i) a mask pattern, (ii) a barrier metal layer of a first material extending opposite a sidewall of the mask pattern and (iii) a metal pattern of a second material different from the first material extending between at least a portion of the barrier metal layer and the mask pattern.