The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2018
Filed:
Feb. 08, 2017
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 21/285 (2006.01); H01L 29/20 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/2855 (2013.01); H01L 21/28568 (2013.01); H01L 21/28575 (2013.01); H01L 21/76852 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01);
Abstract
A semiconductor device includes a semiconductor body having a front face, a back face and an active zone at the front face. A front surface metallization layer having a front face and a back face is disposed over the semiconductor body so that the back face of the front surface metallization layer faces the front face of the semiconductor body and is electrically connected to the active zone. An upper barrier layer made of amorphous molybdenum nitride is disposed on the front face of the front surface metallization layer.