Methods of manufacturing semiconductor devices

Abstract

A method of manufacturing a semiconductor device includes forming on a substrate gate electrodes extending in a first direction and spaced apart from each other in a second direction, forming capping patterns on the gate electrodes, forming interlayer dielectric layer filling spaces between adjacent gate electrodes, forming a hardmask on the interlayer dielectric layer with an opening selectively exposing second to fourth capping patterns, using the hardmask as an etch mask to form holes in the interlayer dielectric layer between the second and third gate electrodes and between the third and fourth gate electrodes, forming a barrier layer and a conductive layer in the holes, performing a first planarization to expose the hardmask, performing a second planarization to expose a portion of the barrier layer covering the second to fourth capping patterns, and performing a third planarization to completely expose the first to fourth capping patterns.