The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2018
Filed:
Mar. 02, 2017
Applicant:
Hitachi Kokusai Electric Inc., Tokyo, JP;
Inventors:
Yugo Orihashi, Toyama, JP;
Kazuhiro Yuasa, Toyama, JP;
Atsushi Moriya, Toyama, JP;
Naoharu Nakaiso, Toyama, JP;
Assignee:
HITACHI KOKUSAI ELECTRIC INC., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/24 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); H01L 27/108 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 21/0259 (2013.01); C23C 16/24 (2013.01); C23C 16/4408 (2013.01); C23C 16/45544 (2013.01); C23C 16/52 (2013.01); H01L 21/0242 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/02645 (2013.01); H01L 27/10855 (2013.01); H01L 27/11582 (2013.01); H01L 21/02592 (2013.01); H01L 21/02595 (2013.01); H01L 21/02598 (2013.01);
Abstract
There is provided a method of manufacturing a semiconductor device, including forming a seed layer on a substrate by performing a cycle a predetermined number of times, the cycle including supplying a halogen-based first processing gas to the substrate; supplying a non-halogen-based second processing gas to the substrate; and supplying a hydrogen-containing gas to the substrate. Further, the method further includes forming a film on the seed layer by supplying a third processing gas to the substrate.