The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2018
Filed:
Sep. 17, 2015
Wallace W Lin, San Jose, CA (US);
Wallace W Lin, San Jose, CA (US);
Other;
Abstract
A computer-implemented method capable of evaluating a plasma-induced charging effect to a transistor in a plasma-based process for a dielectric layer performed above the transistor on which a metal layer is formed is provided. The method may include receiving parameters relating to the transistor, receiving parameters relating to an interconnection, receiving parameters relating to the plasma-based process, assigning first potentials to terminals of the transistor, calculating second potentials at the terminals of the transistor, and determining a degradation state of the transistor according to the second potentials at the terminals of the transistor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile