The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 12, 2018

Filed:

Oct. 08, 2014
Applicant:

Ams Ag, Unterpremstaetten, AT;

Inventors:

Jochen Kraft, Oberaich, AT;

Karl Rohracher, Graz, AT;

Jordi Teva, Veldhoven, NL;

Assignee:

ams AG, Unterpremstaetten, AT;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); H01L 21/00 (2006.01); H01L 23/48 (2006.01); H01L 31/16 (2006.01); G02B 6/42 (2006.01); G02B 6/43 (2006.01); H05K 1/02 (2006.01); H05K 1/11 (2006.01); G02B 6/13 (2006.01); H05K 1/18 (2006.01); H05K 3/42 (2006.01); H05K 3/46 (2006.01);
U.S. Cl.
CPC ...
G02B 6/4283 (2013.01); G02B 6/12002 (2013.01); G02B 6/13 (2013.01); G02B 6/4274 (2013.01); G02B 6/43 (2013.01); H01L 23/481 (2013.01); H01L 31/16 (2013.01); H05K 1/0274 (2013.01); H05K 1/115 (2013.01); G02B 6/428 (2013.01); G02B 2006/121 (2013.01); G02B 2006/12107 (2013.01); G02B 2006/12121 (2013.01); G02B 2006/12123 (2013.01); G02B 2006/12147 (2013.01); H01L 2224/16225 (2013.01); H05K 1/116 (2013.01); H05K 1/181 (2013.01); H05K 3/429 (2013.01); H05K 3/4605 (2013.01); H05K 2201/0939 (2013.01); H05K 2201/09518 (2013.01); H05K 2201/09581 (2013.01); H05K 2201/10174 (2013.01);
Abstract

The method comprises providing a semiconductor substrate, which has a main surface and an opposite further main surface, arranging a contact pad above the further main surface, forming a through-substrate via from the main surface to the further main surface at a distance from the contact pad and, by the same method step together with the through-substrate via, forming a further through-substrate via above the contact pad, arranging a hollow metal via layer in the through-substrate via and, by the same method step together with the metal via layer, arranging a further metal via layer in the further through-substrate via, the further metal via layer contacting the contact pad, and removing a bottom portion of the metal via layer to form an optical via laterally surrounded by the metal via layer.


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