The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 2018

Filed:

Oct. 15, 2015
Applicant:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Inventors:

Qiang Wu, Shanghai, CN;

Liwan Yue, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05G 2/00 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
H05G 2/006 (2013.01); G03F 7/70033 (2013.01); H05G 2/005 (2013.01); H05G 2/008 (2013.01);
Abstract

The present disclosure provides an extreme ultraviolet (EUV) light source. The EUV light source includes a droplet array with a plurality of nozzles arranged along a straight scanning direction, the plurality of nozzle sequentially and intermittently ejecting droplets downward to a radiating position; a laser source configured to generate at least two laser beams and scan the at least two laser beams along the straight scanning direction, the at least two laser beams alternately bombarding droplets arriving at the radiating position to form EUV light; and a condenser with a condenser mirror having a reflective ellipsoidal surface, configured to collect the EUV light and converge collected EUV light at a center of focus.


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Wu, Qiang. (2018). Light source and photolithography apparatus containing the same, calibrating apparatus and method (U.S. Patent No. 9992857). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9992857

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