The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 2018

Filed:

Apr. 27, 2016
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Jaume Roig-Guitart, Oudenaarde, BE;

Filip Bauwens, Loppem, BE;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H02M 1/08 (2006.01); H02M 3/158 (2006.01); H03K 17/10 (2006.01); H03K 17/687 (2006.01); H03K 17/74 (2006.01);
U.S. Cl.
CPC ...
H02M 1/08 (2013.01); H02M 3/158 (2013.01); H03K 17/102 (2013.01); H03K 17/6871 (2013.01); H03K 17/74 (2013.01); H03K 2017/6875 (2013.01); H03K 2217/0018 (2013.01);
Abstract

A method and apparatus for switched mode power supply (SMPS) system includes circuitry configured to produce a voltage output based on an input voltage, the SMPS circuitry includes inductive, capacitive and switching elements configured to generate the voltage output. The switching elements include at least one set of cascode coupled devices, each set of cascode coupled devices including a high electron mobility transistor (HEMT) and one of a diode and a field effect transistor (FET) in a cascode coupling. A controller produces a signal to a gate terminal of the FET of the sets of cascode coupled devices to drive the HEMT switching rate to adjust the output voltage. The circuitry of the SMPS further includes circuitry to couple the substrate of at least one HEMT to a high voltage node of the SMPS system to reduce large voltage spikes or dv/dts.


Find Patent Forward Citations

Loading…