The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2018
Filed:
Nov. 03, 2015
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Daisuke Morita, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 3/10 (2006.01); H01S 5/02 (2006.01); H01S 5/20 (2006.01); H01S 5/12 (2006.01); H01S 5/22 (2006.01);
U.S. Cl.
CPC ...
H01S 3/10 (2013.01); H01S 5/0202 (2013.01); H01S 5/2018 (2013.01); H01S 5/12 (2013.01); H01S 5/22 (2013.01); H01S 2301/173 (2013.01); H01S 2301/203 (2013.01);
Abstract
A semiconductor laser device includes a substrate, a buffer layer provided on an upper surface of the substrate and formed of InP, a laser element having a ridge structure formed above the buffer layer, and an epi intermediate layer formed of a compound semiconductor containing As and exposed to the outside.