The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2018
Filed:
May. 21, 2013
Applicants:
Ramot AT Tel-aviv University Ltd., Tel-Aviv, IL;
Tower Semiconductor Ltd., Migdal HaEmek, IL;
Inventors:
Assignees:
Ramot at Tel-Aviv University Ltd., Tel-Aviv, IL;
Tower Semiconductor Ltd., Migdal HaEmek, IL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/42 (2006.01); H01L 21/02 (2006.01); B82Y 20/00 (2011.01); B82Y 25/00 (2011.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); H01G 11/36 (2013.01); B32B 3/20 (2006.01); C23C 16/455 (2006.01); H01L 27/146 (2006.01); G11C 16/04 (2006.01); H01L 21/28 (2006.01); H01L 27/10 (2006.01); H01L 29/788 (2006.01); H01L 27/11521 (2017.01); H01L 49/02 (2006.01); H01L 29/06 (2006.01); G11C 11/56 (2006.01); H01G 11/24 (2013.01); H01G 11/30 (2013.01); C23C 16/44 (2006.01); H01M 4/02 (2006.01); B01J 13/04 (2006.01); B01J 13/20 (2006.01); B01J 13/22 (2006.01); B32B 15/02 (2006.01); H01L 27/11568 (2017.01); H01L 27/22 (2006.01); H01L 27/28 (2006.01); H01L 27/30 (2006.01); H01L 27/32 (2006.01); H01L 43/02 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); H01L 51/00 (2006.01); H01L 51/05 (2006.01); H01L 51/56 (2006.01); B82Y 10/00 (2011.01); H01L 29/82 (2006.01); H01L 33/00 (2010.01); G11C 13/00 (2006.01); H01M 4/36 (2006.01);
U.S. Cl.
CPC ...
H01L 51/4213 (2013.01); B01J 13/04 (2013.01); B01J 13/203 (2013.01); B01J 13/22 (2013.01); B32B 3/20 (2013.01); B32B 15/02 (2013.01); B82Y 25/00 (2013.01); B82Y 30/00 (2013.01); C23C 16/4417 (2013.01); C23C 16/455 (2013.01); C23C 16/45525 (2013.01); G11C 11/5671 (2013.01); G11C 16/04 (2013.01); G11C 16/0408 (2013.01); H01G 11/24 (2013.01); H01G 11/30 (2013.01); H01G 11/36 (2013.01); H01L 21/28273 (2013.01); H01L 27/10 (2013.01); H01L 27/11521 (2013.01); H01L 27/11568 (2013.01); H01L 27/146 (2013.01); H01L 27/14625 (2013.01); H01L 27/222 (2013.01); H01L 27/283 (2013.01); H01L 27/301 (2013.01); H01L 27/307 (2013.01); H01L 27/3204 (2013.01); H01L 28/60 (2013.01); H01L 29/0665 (2013.01); H01L 29/7881 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01); H01L 51/0002 (2013.01); H01L 51/0512 (2013.01); H01L 51/56 (2013.01); H01M 4/02 (2013.01); B82Y 10/00 (2013.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); G11C 13/0014 (2013.01); G11C 13/0019 (2013.01); G11C 16/0483 (2013.01); G11C 2213/18 (2013.01); G11C 2213/75 (2013.01); G11C 2213/81 (2013.01); H01L 29/0673 (2013.01); H01L 29/788 (2013.01); H01L 29/82 (2013.01); H01L 33/00 (2013.01); H01L 51/0093 (2013.01); H01M 4/366 (2013.01); Y02E 60/13 (2013.01);
Abstract
A method of fabricating a nanoshell is disclosed. The method comprises coating a nanometric core made of a first material by a second material, to form a core-shell nanostructure and applying non-chemical treatment to the core-shell nanostructure so as to at least partially remove the nanometric core, thereby fabricating a nanoshell. The disclosed nanoshell can be used in the fabrication of transistors, optical devices (such as CCD and CMOS sensors), memory devices and energy storage devices.