The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 2018

Filed:

Oct. 08, 2015
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Tetsuhiro Tanaka, Kanagawa, JP;

Kazuki Tanemura, Kanagawa, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/49 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 29/45 (2013.01); H01L 29/4908 (2013.01); H01L 29/78618 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01);
Abstract

A semiconductor device includes a first conductor, a second conductor, a first semiconductor, a second semiconductor, a third semiconductor, and an insulator. The second semiconductor is in contact with an upper surface of the first semiconductor. The first conductor overlaps with the second semiconductor. The insulator is located between the first conductor and the first semiconductor. The second conductor is in contact with an upper surface of the second semiconductor. The third semiconductor is in contact with the upper surface of the first semiconductor, the upper surface of the second semiconductor, and an upper surface of the second conductor.


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