The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 2018

Filed:

Nov. 21, 2014
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Junichi Koezuka, Tochigi, JP;

Yukinori Shima, Gunma, JP;

Masami Jintyou, Tochigi, JP;

Takashi Hamochi, Tochigi, JP;

Satoshi Higano, Tochigi, JP;

Shunpei Yamazaki, Tokyo, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01); G02F 1/1368 (2006.01); H01L 23/532 (2006.01); G02F 1/1362 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); G02F 1/1368 (2013.01); G02F 1/136286 (2013.01); H01L 23/53233 (2013.01); H01L 27/124 (2013.01); H01L 27/1225 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 29/45 (2013.01); H01L 29/4908 (2013.01); H01L 29/4966 (2013.01); H01L 29/786 (2013.01); G02F 2001/13629 (2013.01); G02F 2001/136295 (2013.01); H01L 2924/0002 (2013.01);
Abstract

To provide a novel semiconductor device which includes a transistor and a metal film containing Cu for a wiring, a signal line, or the like. The semiconductor device includes a first wiring, a second wiring, a first transistor, and a second transistor. The first wiring is electrically connected to a source or a drain of the first transistor, and the second wiring is electrically connected to a gate of the second transistor. The first wiring and the second wiring each include a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti). The Cu—X alloy film in the first wiring is connected to the Cu—X alloy film in the second wiring.


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Koezuka, Junichi. (2018). Semiconductor device and manufacturing method thereof (U.S. Patent No. 9991392). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9991392

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