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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9991390 B1

PDFFull Text
Date of Patent:
Jun. 05, 2018

Filed:

Sep. 30, 2015

Thin film transition metal dichalcogenides and methods

Applicant:

The Regents of the University of California, Oakland, CA (US);

Inventors:

Aaron S. George, Los Angeles, CA (US);

Robert Ionescu, Sunnyvale, CA (US);

Hamed Hosseini Bay, Arlington, MA (US);

Mihrimah Ozkan, San Diego, CA (US);

Cengiz S Ozkan, San Diego, CA (US);

Assignee:

The Regents of the University of California, Oakland, CA (US);

Attorney:

Schwegman Lundberg & Woessner, P.A.

Primary Examiner:

Victor A Mandala

Assistant Examiner:

Regan J Rundio

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); C30B 29/46 (2006.01); B82Y 30/00 (2011.01); C23C 16/30 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78681 (2013.01); H01L 21/02381 (2013.01); H01L 21/02485 (2013.01); H01L 21/02488 (2013.01); H01L 21/02499 (2013.01); H01L 21/02516 (2013.01); H01L 21/02568 (2013.01); H01L 21/02628 (2013.01); H01L 21/02664 (2013.01); H01L 21/02694 (2013.01); H01L 29/66742 (2013.01); H01L 29/66969 (2013.01); B82Y 30/00 (2013.01); C23C 16/305 (2013.01); C30B 29/46 (2013.01);
Abstract

A coated substrate including a thin film of a transition metal dichalcogenide and associated methods are shown. In one example, the substrate is a semiconductor wafer. In one example, the thin film is atomically thin, and the substrate is a number of centimeters in diameter. In one example a crystalline structure of the thin film is substantially 2H hexagonal.

Find Patent Forward Citations

George, Aaron. (2018). Thin film transition metal dichalcogenides and methods (U.S. Patent No. 9991390). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9991390

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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