The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2018
Filed:
Jun. 03, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Sung-Dae Suk, Seoul, KR;
Sunhom Steve Paak, Seoul, KR;
Yeon-Ho Park, Seoul, KR;
Dong-Ho Cha, Seongnam-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 29/786 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 29/0673 (2013.01); H01L 29/41733 (2013.01); H01L 29/41775 (2013.01); H01L 29/4236 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/78603 (2013.01); H01L 29/78696 (2013.01); H01L 29/7856 (2013.01); H01L 2029/7858 (2013.01);
Abstract
Semiconductor devices are provided. A semiconductor device includes a channel. The semiconductor device includes a gate structure having first and second portions. The channel is between the first and second portions of the gate structure. A contact structure is adjacent a portion of a side surface of the channel. Related methods of forming semiconductor devices are also provided.