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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9991386 B1

PDFFull Text
Date of Patent:
Jun. 05, 2018

Filed:

Apr. 26, 2016

Epitaxial wafer and method of manufacturing the same

Applicant:

Sumco Corporation, Tokyo, JP;

Inventors:

Toshiaki Ono, Tokyo, JP;

Yumi Hoshino, Tokyo, JP;

Assignee:

SUMCO CORPORATION, Tokyo, JP;

Attorney:

Greenblum & Bernstein, P.L.C.

Primary Examiner:

Matthew Song

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 21/322 (2006.01); H01L 29/08 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/165 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 21/0245 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/02658 (2013.01); H01L 21/3225 (2013.01); H01L 29/0847 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/1608 (2013.01); H01L 29/66636 (2013.01); H01L 29/7843 (2013.01); H01L 29/7847 (2013.01);
Abstract

A method of manufacturing an epitaxial wafer, including a silicon substrate having a surface sliced from single-crystalline silicon and a silicon epitaxial layer deposited on the surface of the silicon substrate, includes an oxygen concentration controlling heat treatment process in which a heat treatment of the epitaxial layer is performed under a non-oxidizing atmosphere after the epitaxial growth such that an oxygen concentration of the surface of the silicon epitaxial layer is set to 1.0×10to 12×10atoms/cm(ASTM F-121, 1979).

Find Patent Forward Citations

Ono, Toshiaki. (2018). Epitaxial wafer and method of manufacturing the same (U.S. Patent No. 9991386). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9991386

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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