The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2018
Filed:
May. 10, 2017
Electronics and Telecommunications Research Institute, Daejeon, KR;
Sung-Bum Bae, Daejeon, KR;
Sung Bock Kim, Daejeon, KR;
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE, Daejeon, KR;
Abstract
A method for manufacturing a semiconductor device includes sequentially stacking a first epitaxial layer, a sacrificial layer, a second epitaxial layer, and a third epitaxial layer on a first substrate, forming a trench which penetrates the third epitaxial layer, the second epitaxial layer, and the sacrificial layer, forming a structure layer on an upper surface of the third epitaxial layer, forming a metal film which covers an inner surface of the trench and the structure layer, forming a second substrate which fills the trench and covers the metal film, and separating the second epitaxial layer, the third epitaxial layer, and the structure layer from the first epitaxial layer.