The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2018
Filed:
Aug. 31, 2016
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventors:
Tatsuo Shimizu, Shinagawa, JP;
Hisashi Saito, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0312 (2006.01); H01L 29/51 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/518 (2013.01); H01L 29/1608 (2013.01); H01L 29/4916 (2013.01); H01L 29/517 (2013.01); H01L 29/2003 (2013.01); H01L 29/4966 (2013.01); H01L 29/7786 (2013.01); H01L 29/7802 (2013.01);
Abstract
A semiconductor device according to an embodiment includes a semiconductor region, a gate electrode, and a first gate insulating film provided between the semiconductor region and the gate electrode and containing a material having a chemical composition expressed by (SiO)(SiN)(where n and m are positive integers), in the material, at least one silicon atom being bonded with at least one oxygen atom and at least one nitrogen atom.