The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2018
Filed:
May. 16, 2017
The United States of America, As Represented BY the Secretary of the Navy, Washington, DC (US);
Travis J. Anderson, Alexandria, VA (US);
Virginia D. Wheeler, Alexandria, VA (US);
David Shahin, Springfield, VA (US);
Andrew D. Koehler, Alexandria, VA (US);
Karl D. Hobart, Alexandria, VA (US);
Francis J. Kub, Arnold, MD (US);
Marko J. Tadjer, Springfield, VA (US);
The United States of America, as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
Systems and methods are provided that enable the production of semiconductor devices having a metal nitride layer in direct contact with a semiconductor layer to form a Schottky diode, such as a TiN gate on an AlGaN/GaN high electron mobility transistor (HEMT). Metal nitrides offer exceptional thermal stability and a lower diffusion coefficient. Technology enabled by embodiments of the present disclosure improves the reliability of GaN-based microwave power transistors.