The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2018
Filed:
Sep. 20, 2017
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Tomoyuki Suzuki, Kiyosu, JP;
Junya Nishii, Kiyosu, JP;
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Abstract
There is provided a semiconductor device comprising a group III nitride semiconductor layer; a gate insulating film formed on the group III nitride semiconductor layer; and a gate electrode formed on the gate insulating film. The gate insulating film comprises a first film that is placed on the group III nitride semiconductor layer, includes silicon and has a higher crystallization temperature than a crystallization temperature of aluminum oxide; and a second film that is placed on the first film and contains aluminum oxide. The first film has a hydrogen concentration of not lower than 1×10atoms/cm, a nitrogen concentration of not lower than 1×10atoms/cmand a carbon concentration of not lower than 1×10atoms/cm. This configuration prevents crystallization of aluminum oxide.