The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2018
Filed:
Jul. 01, 2016
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Koji Iizuka, Ibaraki, JP;
Takahiro Tomimatsu, Ibaraki, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/148 (2006.01); H01L 27/146 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14605 (2013.01); H01L 27/1461 (2013.01); H01L 27/14645 (2013.01); H01L 27/14689 (2013.01); H01L 27/14698 (2013.01); H01L 27/1462 (2013.01); H01L 27/1463 (2013.01);
Abstract
An imaging device is provided, in which the dynamic range of still pictures can be suppressed from being decreased. In the imaging device, a photodiode including an n-type impurity region and a photodiode including an n-type impurity region are formed in a p-type well. An n-type impurity region is formed between the n-type impurity region on one side and that on the other side so as to contact each of the two. The impurity concentration of the last-formed n-type impurity region is set to be lower than those of the first-formed n-type impurity regions.