The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2018
Filed:
Oct. 20, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Rak-Hwan Kim, Suwon-si, KR;
Byung-Hee Kim, Seoul, KR;
Jin-Nam Kim, Anyang-si, KR;
Jong-Min Baek, Seoul, KR;
Nae-In Lee, Seoul, KR;
Eun-Ji Jung, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes an interlayer insulating film, a first trench having a first width, and a second trench having a second width, the second trench including an upper portion and a lower portion, the second width being greater than the first width, a first wire substantially filling the first trench and including a first metal, and a second wire substantially filling the second trench and including a lower wire and an upper wire, the lower wire substantially filling a lower portion of the second trench and including the first metal, and the upper wire substantially filling an upper portion of the second trench and including a second metal different from the first metal.