Integrated shielding and decoupling capacitor structure

Abstract

A shielding and decoupling capacitor structure can be fabricated within an integrated circuit (IC) by forming recesses in a top surface of a dielectric layer and forming a trench in a top surface of an intra-metal dielectric portion of a metal layer deposited on the top surface of the dielectric layer. A bottom of the trench exposes the recesses. A bottom of each recess exposes a conductive structure. A first plate may be formed by depositing a conductive liner onto the bottom and side of the recess and onto the bottom and side of the trench. A conformal dielectric film may be deposited onto the first plate within the trench and recesses. A second plate may be formed by depositing an electrically conductive material within the trench and recesses over the conformal dielectric film. The conformal dielectric film electrically insulates the first and second plates from each other.