The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 2018

Filed:

Dec. 14, 2017
Applicant:

SK Hynix Inc., Icheon-si Gyeonggi-do, KR;

Inventors:

Seok Joon Kang, Icheon-si, KR;

Ho Seok Em, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G01K 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G01K 13/00 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01); G11C 2013/0054 (2013.01);
Abstract

A resistive memory device and a method may be provided. The resistive memory device may include a reset voltage-detecting circuit, a set voltage-detecting circuit, a control circuit and a read voltage-generating circuit. The reset voltage-detecting circuit may receive a variable preliminary reset current to detect reference reset voltage information. The set voltage-detecting circuit may receive a variable preliminary set current to detect reference set voltage information. The control circuit may receive the reference reset voltage information and the reference set voltage information to determine middle voltage information of the reference reset voltage information and the reference set voltage information. The read voltage-generating circuit may receive the middle voltage information to generate a read voltage.


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