The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 2018

Filed:

Nov. 11, 2014
Applicant:

Sentron Inc., Daejeon, KR;

Inventors:

Hyung-Cheol Shin, Daejeon, KR;

Il-Hyun Yun, Daejeon, KR;

Assignee:

SENTRON INC., , KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/041 (2006.01); G06F 3/044 (2006.01); A61M 5/31 (2006.01); G02F 1/1333 (2006.01); G02F 1/1343 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); G06F 3/046 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0416 (2013.01); A61M 5/31 (2013.01); G02F 1/1368 (2013.01); G02F 1/13338 (2013.01); G02F 1/134336 (2013.01); G02F 1/134363 (2013.01); G02F 1/136286 (2013.01); G06F 3/044 (2013.01); G06F 3/0412 (2013.01); G06F 3/0418 (2013.01); A61M 2205/505 (2013.01); G06F 3/046 (2013.01); G06F 2203/04106 (2013.01); G06F 2203/04111 (2013.01);
Abstract

Disclosed is a touch input sensing device comprising: a touch input sensing electrode; a touch sensing unit connected to one point of the touch input sensing electrode to measure a change in a touch capacitance formed by the touch input sensing electrode according to a touch input; a second node included in the touch input sensing device to form a capacitance between the one point and the second node; and a potential control unit for providing a potential value following the potential of the one point to the second node to decrease a potential difference between the one point and the second node.


Find Patent Forward Citations

Shin, Hyung-Cheol. (2018). Touch input sensing method for reducing influence of parasitic capacitance and device therefor (U.S. Patent No. 9990080). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9990080

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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