The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 2018

Filed:

Jan. 08, 2016
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Seung-Won Park, Seoul, KR;

Dae-Hwan Jang, Seoul, KR;

Min-Uk Kim, Seoul, KR;

Jung-Gun Nam, Suwon-si, KR;

Dae-Young Lee, Seoul, KR;

Gug-Rae Jo, Asan-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C03C 15/00 (2006.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0002 (2013.01); B81C 2201/015 (2013.01);
Abstract

An exemplary embodiment discloses an imprint lithography method including: forming a first imprint pattern on a base substrate in a first area; forming a first resist pattern on the base substrate in a second area, the second area partially overlapping the first area; etching a third area using the first imprint pattern and the first resist pattern as an etch barrier, wherein the third area is a portion of the first area that is not overlapped with the second area; removing the first imprint pattern and the first resist pattern; forming a second imprint pattern on the base substrate in a fourth area which overlaps the second area and partially overlaps the third area; forming a second resist pattern on the base substrate in the third area; and etching the second area using the second imprint pattern and the second resist pattern as an etch barrier.


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