The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2018
Filed:
Aug. 17, 2015
Sharp Kabushiki Kaisha, Osaka, JP;
Yutaka Takamaru, Osaka, JP;
Hiroshi Matsukizono, Osaka, JP;
Tadayoshi Miyamoto, Osaka, JP;
Takao Saitoh, Osaka, JP;
Yohsuke Kanzaki, Osaka, JP;
Keisuke Ide, Osaka, JP;
SHARP KABUSHIKI KAISHA, Osaka, JP;
Abstract
A semiconductor device includes: a first substrate; a gate electrode on the first substrate; a gate insulating layer on the gate electrode; an oxide semiconductor film including a channel region disposed over the gate electrode through the gate insulating layer and lowered-resistance region contacting the channel region; a source electrode and a drain electrode on the channel region; a first insulating film covering at least the channel region and including a contact hole that exposes the lowered-resistance region; and a second insulating film having reducing characteristics and disposed above the first insulating film across the contact hole, the second insulating film contacting the lowered-resistance region inside the contact hole.