The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2018
Filed:
Sep. 10, 2013
Sapphire Technology Co., Ltd., Hwaseong-si, KR;
Hee Choon Lee, Seoul, KR;
Yi Sik Choi, Gwacheon-si, KR;
Sung Hwan Moon, Suwon-si, KR;
Gye Won Jang, Seoul, KR;
Bok Kee Na, Hwaseong-si, KR;
SAPPHIRE TECHNOLOGY CO., LTD., Hwaseong-si, KR;
Abstract
Provided is a sapphire single crystal heat treatment method comprising the steps of: charging a sapphire single crystal into a chamber; raising the temperature in the chamber to a target temperature by heating the chamber; holding the temperature in the chamber at a constant temperature; and cooling the inside of the chamber to room temperature, wherein the temperature raising step comprises: a first temperature raising step of raising the temperature to a first set temperature at a temperature raising rate of 4° C./min to 5° C./min; and a second temperature raising step of raising the temperature to a second set temperature at a temperature raising rate of 1° C./min or less after the first temperature raising step has been completed. The temperature raising process is executed in a multi-stage, to reduce the temperature raising time and prevent a sapphire single crystal from being affected by heat.