The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2018
Filed:
Sep. 19, 2013
The Penn State Research Foundation, University Park, PA (US);
Consejo Superior DE Investigaciones Cientificas (Csic), Madrid, ES;
Pilar Miranzo, Madrid, ES;
Carmen Ocal, Molins de Rei, ES;
Maria Isabel Osendi, Madrid, ES;
Manuel Belmonte, Madrid, ES;
Cristina Ramirez, Madrid, ES;
Benito Roman-Manso, Zamora, ES;
Humberto R. Gutierrez, Louisville, KY (US);
Mauricio Terrones, State College, PA (US);
The Penn State Research Foundation, State College, PA (US);
Abstract
We provide a method for the in situ development of graphene containing silicon carbide (SiC) matrix ceramic composites, and more particularly to the in situ graphene growth within the bulk ceramic through a single-step approach during SiC ceramics densification using an electric current activated/assisted sintering (ECAS) technique. This approach allows processing dense, robust, highly electrical conducting and well dispersed nanocomposites having a percolated graphene network, eliminating the handling of potentially hazardous nanostructures. Graphene/SiC components could be used in technological applications under strong demanding conditions where good electrical, thermal, mechanical and/or tribological properties are required, such as micro and nanoelectromechanical systems (MEMS and NEMS), sensors, actuators, heat exchangers, breaks, components for engines, armors, cutting tools, microturbines or microrotors.