The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
Nov. 06, 2015
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Alfons Dehe, Reutlingen, DE;
Andreas Froemel, Ulm, DE;
Assignee:
INFINEON TECHNOLOGIES AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04R 19/04 (2006.01); H04R 7/08 (2006.01); H04R 31/00 (2006.01); H04R 19/00 (2006.01); B81B 3/00 (2006.01); H04R 23/00 (2006.01); H04R 7/02 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
H04R 19/04 (2013.01); B81B 3/0021 (2013.01); B81B 3/0078 (2013.01); B81C 1/00158 (2013.01); H04R 7/02 (2013.01); H04R 7/08 (2013.01); H04R 19/005 (2013.01); H04R 23/006 (2013.01); H04R 31/00 (2013.01); B81B 2201/0257 (2013.01); B81B 2201/0264 (2013.01); B81B 2203/0127 (2013.01); H04R 2201/003 (2013.01); H04R 2410/03 (2013.01);
Abstract
A MEMS microphone includes a first diaphragm element, a counter electrode element, and a low pressure region between the first diaphragm element and the counter electrode element. The low pressure region has a pressure less than an ambient pressure.