The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
Jan. 31, 2017
Qualcomm Incorporated, San Diego, CA (US);
Jeremy Goldblatt, Encinitas, CA (US);
Darryl Jessie, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
A power amplification device includes a power amplifier core stage and a power amplifier driver stage. The power amplifier driver stage receives a radio frequency signal to be amplified by the power amplification device. The power amplifier driver stage includes a first source follower input transistor and a first current source transistor. A source of the first source follower input transistor is coupled to a drain of the first current source transistor. The source of the first source follower input transistor is directly coupled to the power amplifier core stage to drive the power amplifier core stage. An input match and passive voltage gain device is coupled to the power amplifier driver stage to generate a voltage gain at an input of the power amplifier driver stage. A first bias source is configured to generate a first bias signal to bias the power amplifier driver stage.