The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 29, 2018

Filed:

Feb. 11, 2013
Applicant:

Ihp Gmbh—innovations for High Performance Microelectronics/leibniz-institut Fur Innovative Mikroelektronik, Frankfurt, DE;

Inventors:

Giovanni Capellini, Rome, IT;

Christian Wenger, Berlin, DE;

Thomas Schroder, Berlin, DE;

Grzegorz Kozlowski, Cottbus, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 31/12 (2006.01); H01L 21/00 (2006.01); H01S 5/32 (2006.01); H01L 33/34 (2010.01); H01S 5/02 (2006.01);
U.S. Cl.
CPC ...
H01S 5/3201 (2013.01); H01L 33/34 (2013.01); H01S 5/021 (2013.01); H01S 5/3223 (2013.01);
Abstract

A semiconductor light emitter device, comprising a substrate, an active layer made of Germanium, which is configured to emit light under application of an operating voltage to the semiconductor light emitter device, wherein a gap is arranged on the substrate, which extends between two bridgeposts laterally spaced from each other, the active layer is arranged on the bridgeposts and bridges the gap, and wherein the semiconductor light emitter device comprises a stressor layer, which induces a tensile strain in the active layer above the gap.


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