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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9985200 B1

PDFFull Text
Date of Patent:
May. 29, 2018

Filed:

May. 24, 2017

Magnetic memory devices including oxidized non-magnetic patterns with non-metallic elements and methods of fabricating the same

Applicants:

Joonmyoung Lee, Anyang-si, KR;

Whankyun Kim, Seoul, KR;

Eunsun Noh, Suwon-si, KR;

Inventors:

Joonmyoung Lee, Anyang-si, KR;

Whankyun Kim, Seoul, KR;

Eunsun Noh, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Ward and Smith, P.A.

Primary Examiner:

Minh-Loan Tran

Int. Cl.
CPC ...
H01L 43/08 (2006.01); H01L 43/02 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); G11C 11/16 (2006.01); H01L 43/06 (2006.01); H01L 43/04 (2006.01); H01L 43/14 (2006.01); H01L 27/11507 (2017.01); H01L 27/11502 (2017.01); H01L 27/22 (2006.01); G11B 5/39 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/16 (2013.01); G11C 11/161 (2013.01); H01L 43/04 (2013.01); H01L 43/06 (2013.01); H01L 43/065 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01); H01L 43/14 (2013.01); G11B 5/3909 (2013.01); H01L 27/11502 (2013.01); H01L 27/11507 (2013.01); H01L 27/22 (2013.01); H01L 27/222 (2013.01);
Abstract

A magnetic memory device can include a first electrode and a first magnetic structure that is spaced apart from the first electrode, where the first magnetic structure can include a magnetic pattern therein. An oxidized non-magnetic pattern can be located between the first magnetic structure and the first electrode, where the oxidized non-magnetic pattern can include a non-metallic element having a standard free energy of oxide formation that is less than about that of a standard free energy of oxide formation of Fe.

Find Patent Forward Citations

Lee, Joonmyoung. (2018). Magnetic memory devices including oxidized non-magnetic patterns with non-metallic elements and methods of fabricating the same (U.S. Patent No. 9985200). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9985200

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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