The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 29, 2018

Filed:

Dec. 08, 2016
Applicant:

Innolux Corporation, Miao-Li County, TW;

Inventors:

Jen-Chieh Peng, Miao-Li County, TW;

Bo-Feng Chen, Miao-Li County, TW;

Tsau-Hua Hsieh, Miao-Li County, TW;

Assignee:

INNOLUX CORPORATION, Miao-Li County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/026 (2006.01); H01L 33/00 (2010.01); H01L 33/62 (2010.01); H01L 27/12 (2006.01); H01L 33/38 (2010.01); H01L 33/50 (2010.01); H01L 33/54 (2010.01); H01L 25/075 (2006.01); H01L 27/15 (2006.01); H01L 25/16 (2006.01); H01L 33/08 (2010.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 25/0756 (2013.01); H01L 27/124 (2013.01); H01L 27/1248 (2013.01); H01L 27/153 (2013.01); H01L 33/0079 (2013.01); H01L 33/38 (2013.01); H01L 33/50 (2013.01); H01L 33/504 (2013.01); H01L 33/507 (2013.01); H01L 33/54 (2013.01); H01L 25/167 (2013.01); H01L 33/08 (2013.01);
Abstract

A light-emitting diode is provided. The light-emitting diode includes a first semiconductor structure having an upper surface and a lower surface; a second semiconductor layer disposed adjacent to the upper surface; a third semiconductor layer disposed adjacent to the lower surface; two light-emitting layers disposed between the upper surface and the second semiconductor layer and disposed between the lower surface and the third semiconductor layer, respectively; a first electrode disposed over the second semiconductor layer; and a second electrode disposed over the third semiconductor layer.


Find Patent Forward Citations

Loading…