The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 29, 2018

Filed:

Mar. 22, 2016
Applicant:

University of South Carolina, Columbia, SC (US);

Inventors:

M. Asif Khan, Irmo, SC (US);

Qhalid Fareed, Columbia, SC (US);

Vinod Adivarahan, Columbia, SC (US);

Assignee:

University of South Carolina, Columbia, SC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/12 (2010.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/20 (2010.01); H01L 33/06 (2010.01); H01L 33/22 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/12 (2013.01); H01L 21/0242 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02647 (2013.01); H01L 33/007 (2013.01); H01L 33/06 (2013.01); H01L 33/20 (2013.01); H01L 33/22 (2013.01); H01L 33/32 (2013.01);
Abstract

An ultraviolet light emitting semiconductor chip, its use in a LED, and methods of its fabrication are disclosed. The semiconductor chip can include a buffer layer of AlGaN, where 0<x≤1 having a thickness from about 10 μm to about 3 mm and defining apertures in the thickness of the buffer layer formed due to lateral overgrowth of the buffer layer over a grooved basal substrate. A n-junction LED layer overlying the buffer layer, a multiple quantum well LED layer overlying the n-junction LED layer, and a p-junction LED layer overlying the multiple quantum well LED layer are also included in the chip, where all of the LED layers comprise AlGaN, where 0<x≤1.


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