The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 29, 2018

Filed:

Nov. 11, 2016
Applicant:

Alliance for Sustainable Energy, Llc, Golden, CO (US);

Inventors:

David L. Young, Golden, CO (US);

Pauls Stradins, Golden, CO (US);

William Nemeth, Littleton, CO (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/02 (2006.01); H01L 31/0368 (2006.01); H01L 31/0376 (2006.01); H01L 31/18 (2006.01); H01L 31/0216 (2014.01); H01L 31/061 (2012.01); H01L 31/0224 (2006.01); H01L 31/0687 (2012.01); H01L 31/0288 (2006.01); H01L 31/028 (2006.01); H01L 31/0236 (2006.01); H01L 31/068 (2012.01);
U.S. Cl.
CPC ...
H01L 31/061 (2013.01); H01L 31/028 (2013.01); H01L 31/0288 (2013.01); H01L 31/02168 (2013.01); H01L 31/02363 (2013.01); H01L 31/022425 (2013.01); H01L 31/0682 (2013.01); H01L 31/0687 (2013.01); H01L 31/1804 (2013.01); H01L 31/1864 (2013.01);
Abstract

Methods for forming passivated contacts include implanting compound-forming ions into a substrate to about a first depth below a surface of the substrate, and implanting dopant ions into the substrate to about a second depth below the surface. The second depth may be shallower than the first depth. The methods also include annealing the substrate.


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