The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
Feb. 21, 2011
Toshinori Yoshimuta, Takatsuki, JP;
Satoshi Tokuda, Kusatsu, JP;
Koichi Tanabe, Uji, JP;
Hiroyuki Kishihara, Kizugawa, JP;
Masatomo Kaino, Kyoto-fu, JP;
Akina Yoshimatsu, Osaka, JP;
Toshiyuki Sato, Kyoto, JP;
Shoji Kuwabara, Ibaraki, JP;
Toshinori Yoshimuta, Takatsuki, JP;
Satoshi Tokuda, Kusatsu, JP;
Koichi Tanabe, Uji, JP;
Hiroyuki Kishihara, Kizugawa, JP;
Masatomo Kaino, Kyoto-fu, JP;
Akina Yoshimatsu, Osaka, JP;
Toshiyuki Sato, Kyoto, JP;
Shoji Kuwabara, Ibaraki, JP;
SHIMADZU CORPORATION, Kyoto, JP;
Abstract
A graphite substrate is processed to have surface unevenness in a range of 1 μm to 8 μm. Thereby, a semiconductor film to be laminated on the graphite substrate has a stable film quality, and thus adhesion of the graphite substrate and the semiconductor layer can be enhanced. When an electron blocking layer is interposed between the graphite substrate and the semiconductor layer, the electron blocking layer is thin and thus the surface unevenness of the graphite substrate is transferred onto the electron blocking layer. Consequently, the electron blocking layer also has surface unevenness approximately in such range. Thus, almost the same effect as a configuration in which the semiconductor layer is directly connected to the graphite substrate can be produced.