The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
Aug. 23, 2016
Renesas Electronics Corporation, Tokyo, JP;
Photonics Electronics Technology Research Association, Tokyo, JP;
Tatsuya Usami, Hitachinaka, JP;
Yoshiaki Yamamoto, Hitachinaka, JP;
Keiji Sakamoto, Hitachinaka, JP;
Tohru Mogami, Tokyo, JP;
Tsuyoshi Horikawa, Tokyo, JP;
Keizo Kinoshita, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
PHOTONICS ELECTRONICS TECHNOLOGY RESEARCH ASSOCIATION, Tokyo, JP;
Abstract
A performance of a semiconductor device is improved. In a method of manufacturing a semiconductor device, a first semiconductor portion and a second semiconductor portion made of silicon are formed on a base body via an insulation layer, and a third semiconductor portion including a semiconductor layer made of germanium is formed on the second semiconductor portion. Next, an insulation film is formed above the first semiconductor portion, an opening portion reaching the first semiconductor portion from an upper surface of the insulation film is formed, and a metal silicide layer is formed on a part of an upper surface of the first semiconductor portion exposed to the opening portion.