The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 29, 2018

Filed:

Sep. 17, 2015
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Hiroki Hiraga, Kawasaki, JP;

Soichiro Shibasaki, Nerima, JP;

Naoyuki Nakagawa, Setagaya, JP;

Mutsuki Yamazaki, Yokohama, JP;

Kazushige Yamamoto, Yokohama, JP;

Shinya Sakurada, Shinagawa, JP;

Michihiko Inaba, Yokohama, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/0749 (2012.01);
U.S. Cl.
CPC ...
H01L 31/02168 (2013.01); H01L 31/02167 (2013.01); H01L 31/022425 (2013.01); H01L 31/022466 (2013.01); H01L 31/022475 (2013.01); H01L 31/022483 (2013.01); H01L 31/0749 (2013.01); Y02E 10/50 (2013.01); Y02E 10/541 (2013.01);
Abstract

A photoelectric conversion device of an embodiment has a substrate, a bottom electrode on the substrate, a light absorbing layer on the bottom electrode, an n-type layer on the light absorbing layer, a transparent electrode on the n-type layer, and an oxide layer on the transparent electrode. nand nsatisfy the relation 100/110≤n/n≤110/100. nis the refractive index of the transparent electrode. nis the refractive index of the oxide layer.


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