Pixel array structure having doped active layer with uneven thickness and manufacturing method thereof, array substrate and display device

Abstract

A pixel array structure and manufacturing method thereof, an array substrate and a display device are provided. The manufacturing method of the pixel array structure includes: forming a doped active layer over an active layer, the doped active layer having a portion with a larger thickness and a portion with a smaller thickness; forming a source/drain metal layer on the doped active layer and the active layer; conducting an etching process on the source/drain metal layer, so as to form a source electrode and a drain electrode, one of which partially covers the portion of the doped active layer with a larger thickness; conducting an etching process on the doped active layer and the active layer in a region between the source electrode and the drain electrode, forming an optimized channel. With the manufacturing method, the on-state current of a channel of a thin film transistor can be raised.