The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
Mar. 20, 2017
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Yukihisa Ueno, Kiyosu, JP;
Nariaki Tanaka, Kiyosu, JP;
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Abstract
To improve the breakdown voltage of a semiconductor device. In a terminal region of the semiconductor device, a mesa groove, a recess groove, an electric field relaxation region, and a gradient distributed low concentration p-type layer region are formed. A recess groove is fromed between a device region and the mesa groove so as to surround the device region. A region where a p-type layer is thinned by the recess groove is the electric field relaxation region. The gradient distributed low concentration p-type layer region is formed on the surface of the electric field relaxation region. The average carrier concentration of the entire gradient distributed low concentration p-type layer region is lower than the carrier concentration of the p-type layer. By forming the gradient distributed low concentration p-type layer region, the electric field relaxation region is quickly completely depleted when a reverse voltage is applied, thereby improving the breakdown voltage.