The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
Nov. 14, 2016
Applicant:
Boe Technology Group Co., Ltd., Beijing, CN;
Inventors:
Xiaolong Li, Beijing, CN;
Zheng Liu, Beijing, CN;
Dong Li, Beijing, CN;
Huijuan Zhang, Beijing, CN;
Jian Min, Beijing, CN;
Assignee:
BOE Technology Group Co., Ltd., Beijing, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/66 (2006.01); H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66757 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/3065 (2013.01); H01L 29/78675 (2013.01);
Abstract
A method for processing a polysilicon thin film and a method for fabricating a thin film transistor are provided. The method for processing a polysilicon thin film includes: etching the polysilicon thin film using etching particles. An angle between an incident direction of the etching particles and the polysilicon thin film is larger than 0° and less than 90°.