The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
Jan. 31, 2017
Applicant:
Sii Semiconductor Corporation, Chiba-shi, Chiba, JP;
Inventor:
Yoshitaka Kimura, Chiba, JP;
Assignee:
ABLIC INC., Chiba, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/62 (2006.01); H01L 23/525 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5258 (2013.01); H01L 23/53209 (2013.01); H01L 23/53257 (2013.01); H01L 23/53271 (2013.01); H01L 23/53295 (2013.01); H01L 23/5256 (2013.01); H01L 23/62 (2013.01);
Abstract
Provided is a semiconductor device preventing readhesion of conductive body which forms fuse elements and breakage of the fuse elements. The semiconductor device includes a first insulating film formed on a semiconductor substrate, a plurality of fuse elements formed on the first insulating film adjacent to one another, a protective insulating film covering at least side surfaces of the fuse elements, and a second insulating film formed of one of a BPSG film and a PSG film to cover the fuse elements and the protective insulating film. The protective insulating film is higher in mechanical strength than the second insulating film.