The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 29, 2018

Filed:

May. 23, 2016
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Takao Shuto, Takasaki, JP;

Kaoru Ishihara, Takasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/522 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49575 (2013.01); H01L 21/4825 (2013.01); H01L 21/565 (2013.01); H01L 23/3114 (2013.01); H01L 23/4952 (2013.01); H01L 23/49513 (2013.01); H01L 23/49541 (2013.01); H01L 23/49548 (2013.01); H01L 23/49582 (2013.01); H01L 23/5227 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 21/4842 (2013.01); H01L 23/3107 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/49171 (2013.01); H01L 2224/73215 (2013.01); H01L 2224/73265 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06531 (2013.01); H01L 2225/06562 (2013.01); H01L 2225/06582 (2013.01); H01L 2924/181 (2013.01);
Abstract

An object of the present invention is to improve the performance of a semiconductor device that transmits signals using inductive coupling of inductors. A semiconductor device includes a first semiconductor chip having a first inductor formed on the first top surface side and a second semiconductor chip having a second inductor formed on the second top surface side. The first semiconductor chip and the second semiconductor chip are laminated on each other so that the first top surface and the second top surface face each other. Further, a plurality of first pads of the first semiconductor chip is provided along each of a first chip side and a second chip side among four sides of the first top surface. Further, each of the first pads of the first semiconductor chip is not overlapped with the second semiconductor chip in planar view.


Find Patent Forward Citations

Shuto, Takao. (2018). Semiconductor device and manufacturing method thereof (U.S. Patent No. 9984959). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9984959

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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