The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
Jan. 12, 2017
International Business Machines Corporation, Armonk, NY (US);
Joel P. de Souza, Putnam Valley, NY (US);
Yun Seog Lee, White Plains, NY (US);
Kunal Mukherjee, Goleta, CA (US);
Devendra K. Sadana, Pleasantville, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
Embodiments are directed to a method of passivating a surface of a high-mobility semiconductor and resulting structures having a reduced interface defect density. A semiconductor layer is formed on a substrate. A surface of the semiconductor layer is contacted with a sulfur source including thiourea at a temperature of up to about 90 degrees Celsius to form a sulfur passivation layer on the surface of the semiconductor layer. A dielectric layer is formed on the sulfur passivation layer and a minimum of interface trap density distribution at an interface between the semiconductor layer and the dielectric layer is less than about 2.0×10cmeV.