The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
May. 30, 2014
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Matthias Kuenle, Villach, AT;
Gerhard Schmidt, Wernberg, AT;
Martin Sporn, Villach, AT;
Markus Kahn, Rangersdorf, AT;
Juergen Steinbrenner, Noetsch, AT;
Ravi Joshi, Villach, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 29/06 (2006.01); C23C 14/06 (2006.01); C23C 14/34 (2006.01); H01L 29/40 (2006.01); C23C 14/58 (2006.01); C23C 14/35 (2006.01); H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 29/73 (2006.01);
U.S. Cl.
CPC ...
H01L 21/762 (2013.01); C23C 14/0605 (2013.01); C23C 14/345 (2013.01); C23C 14/35 (2013.01); C23C 14/5806 (2013.01); H01L 21/02527 (2013.01); H01L 21/02631 (2013.01); H01L 29/0649 (2013.01); H01L 29/0657 (2013.01); H01L 29/16 (2013.01); H01L 29/408 (2013.01); H01L 29/73 (2013.01);
Abstract
According to various embodiments, a semiconductor wafer may include: a semiconductor body including an integrated circuit structure; and at least one tetrahedral amorphous carbon layer formed at least one of over or in the integrated circuit structure, the at least one tetrahedral amorphous carbon layer may include a substance amount fraction of sp-hybridized carbon of larger than approximately 0.4 and a substance amount fraction of hydrogen smaller than approximately 0.1.