The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
Oct. 28, 2014
Applicant:
Zeon Corporation, Tokyo, JP;
Inventor:
Tatsuya Sugimoto, Tokyo, JP;
Assignee:
ZEON CORPORATION, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); C07C 17/00 (2006.01); C09K 13/08 (2006.01); C09K 13/00 (2006.01); H01L 21/311 (2006.01); H01L 21/3065 (2006.01); H01L 21/3105 (2006.01); C07C 19/08 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32137 (2013.01); C07C 17/00 (2013.01); C07C 19/08 (2013.01); C09K 13/00 (2013.01); C09K 13/08 (2013.01); H01J 37/32009 (2013.01); H01J 37/3244 (2013.01); H01L 21/3065 (2013.01); H01L 21/311 (2013.01); H01L 21/3105 (2013.01); H01L 21/31116 (2013.01); H01L 21/32136 (2013.01); H01J 2237/334 (2013.01);
Abstract
The present invention is a fluorohydrocarbon represented by R—F wherein R represents an isobutyl group or a t-butyl group), the fluorohydrocarbon having a purity of 99.9% by volume or more and a total butenes content of 1,000 ppm by volume or less; a use of the fluorohydrocarbon as a plasma etching gas; and a plasma etching method comprising selectively subjecting an inorganic nitride film stacked on silicon or a silicon oxide film to plasma etching using the fluorohydrocarbon.