The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
Mar. 07, 2017
Applicant:
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Inventors:
Tsutomu Ogihara, Jyoetsu, JP;
Rie Kikuchi, Jyoetsu, JP;
Assignee:
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/308 (2006.01); G03F 7/00 (2006.01); G03F 7/09 (2006.01); G03F 7/11 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3081 (2013.01); G03F 7/0002 (2013.01); G03F 7/091 (2013.01); G03F 7/094 (2013.01); G03F 7/11 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/2037 (2013.01); G03F 7/325 (2013.01); G03F 7/327 (2013.01); H01L 21/0228 (2013.01); H01L 21/0276 (2013.01); H01L 21/02118 (2013.01); H01L 21/02271 (2013.01); H01L 21/02282 (2013.01); H01L 21/02318 (2013.01); H01L 21/02348 (2013.01); H01L 21/3065 (2013.01); H01L 21/3086 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01);
Abstract
The present invention provides a method for forming an organic film, including: forming a coating film by spin coating of an organic film-forming composition onto a substrate having an uneven pattern, and thereafter subjecting the substrate to a vibration treatment, and after or simultaneously with the vibration treatment, insolubilizing the coating film to an organic solvent to form the organic film. This provides a method for forming an organic film that can fill an uneven pattern on a substrate to highly flatten a substrate at low cost in a production step of a semiconductor apparatus, etc.