The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
Mar. 14, 2014
Victor Nguyen, Novato, CA (US);
Woong Jae Lee, San Jose, CA (US);
Mihaela Balseanu, Sunnyvale, CA (US);
Li-qun Xia, Cupertino, CA (US);
Derek R. Witty, Fremont, CA (US);
Victor Nguyen, Novato, CA (US);
Woong Jae Lee, San Jose, CA (US);
Mihaela Balseanu, Sunnyvale, CA (US);
Li-Qun Xia, Cupertino, CA (US);
Derek R. Witty, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Provided are methods of for deposition of SiN films via PEALD processes. Certain methods pertain to exposing a substrate surface to a silicon precursor to provide a silicon precursor at the substrate surface; purging excess silicon precursor; exposing the substrate surface to an ionized reducing agent; and purging excess ionized reducing agent to provide a film comprising SiN, wherein the substrate has a temperature of 23° C. to about 550° C.